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effects of transverse temperature field nonuniformity on stress in silicon sheet growthStress and strain rate distributions are calculated using finite element analysis for steady-state growth of thin silicon sheet temperature nonuniformities imposed in the transverse (sheet width) dimension. Significant reductions in residual stress are predicted to occur for the case where the sheet edge is cooled relative to its center provided plastic deformation with high creep rates is present.
Document ID
19870049908
Document Type
Reprint (Version printed in journal)
Authors
Mataga, P. A.
(Harvard Univ. Cambridge, MA, United States)
Hutchinson, J. W.
(Harvard Univ. Cambridge, MA, United States)
Chalmers, B.
(Harvard University Cambridge, MA, United States)
Bell, R. O.
(Harvard Univ. Cambridge, MA, United States)
Kalejs, J. P.
(Mobil Solar Energy Corp. Waltham, MA, United States)
Date Acquired
August 13, 2013
Publication Date
March 1, 1987
Publication Information
Publication: Journal of Crystal Growth
Volume: 82
Issue: 1-2
ISSN: 0022-0248
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: JPL-956312
Distribution Limits
Public
Copyright
Other