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Growth rate of CdS by vapor transport in a closed ampouleVapor transport of CdS in a closed ampoule due to a temperature gradient was investigated. Comparisons between the theoretical and experimental growth rate for the following conditions were made: (1) with and without the presence of Ar gas, (2) convective contribution to the growth rate in the vertical and horizontal configurations, and (3) the effect of starting material composition on the growth rate. It was found that Cd reacts with fused silica ampoules and causes the contamination of CdS samples.
Document ID
19870052644
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/0022-0248(87)90079-0
Authors
Su, Ching-Hua (NASA Marshall Space Flight Center; Universities Space Research Association, Huntsville, AL, United States)
Date Acquired
August 13, 2013
Publication Date
February 1, 1987
Publication Information
Publication: Journal of Crystal Growth
Volume: 80
Issue: 2, Fe
ISSN: 0022-0248
Subject Category
Materials Processing
Accession Number
87A39918
Distribution Limits
Public
Copyright
Other

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