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The effect of V2O5 on the growth and properties of Bi-YIGThe effect of V2O5 additions to PbO-Bi2O3 flux was investigated with respect to the properties of Bi-YIG epitaxial films for magnetic bubble devices. The Bi content of the films (including an estimated 10 percent Pt(2+) were calculated from Faraday rotation measurements. For films grown at constant supercooling, the Bi content increased by 60 percent as the V2O5 content of the flux was increased from 0 to 9 mol pct. Lattice constant data were shown to agree with measured Bi and Ca-Si contents. The growth-induced magnetic anisotropy increased proportionally to the Bi content and could be fairly represented by a model; however, the coefficients of the model vary widely between data sets for different melt compositions.
Document ID
19870056944
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Luther, L. C.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Rana, V. V. S.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Licht, S. J.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Norelli, M. P.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 13, 2013
Publication Date
April 1, 1987
Publication Information
Publication: Journal of Crystal Growth
Volume: 82
Issue: 4 Ap
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
87A44218
Funding Number(s)
CONTRACT_GRANT: F33615-81-C-1404
Distribution Limits
Public
Copyright
Other

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