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Determination of a natural valence-band offset - The case of HgTe and CdTeA method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.
Document ID
19870057076
Document Type
Reprint (Version printed in journal)
Authors
Shih, C. K. (Stanford Univ. CA, United States)
Spicer, W. E. (Stanford University CA, United States)
Date Acquired
August 13, 2013
Publication Date
June 15, 1987
Publication Information
Publication: Physical Review Letters
Volume: 58
ISSN: 0031-9007
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NAS1-18232
Distribution Limits
Public
Copyright
Other