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Thermal expansion and thermal expansion anisotropy of SiC polytypesThe principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is developed that expresses the principal axial thermal expansion coefficients of all of the SiC polytypes. It is then applied to address the thermal expansion anisotropy of the noncubic SiC structures.
Document ID
19870059892
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Li, Z.
(Washington Univ. Seattle, WA, United States)
Bradt, R. C.
(Washington, University Seattle, United States)
Date Acquired
August 13, 2013
Publication Date
July 1, 1987
Publication Information
Publication: American Ceramic Society, Journal
Volume: 70
ISSN: 0002-7820
Subject Category
Nonmetallic Materials
Accession Number
87A47166
Funding Number(s)
CONTRACT_GRANT: NAGW-199
Distribution Limits
Public
Copyright
Other

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