Slow crack growth in sintered silicon nitride

The strength and crack growth characteristics of a sintered silicon nitride were studied at 1000 C. Fractographic analysis of material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 6 ksi/min. This material can sustain a 40-ksi flexural stress at 1000 C for 400 h or more but is susceptible to both SCG and creep deformation at higher stress levels. The crack velocity exponent (N) determined both from dynamic and static fatigue experiments lies in a range from 13 to 22. The subcritical crack growth and creep behavior at 1000 C is primarily controlled by the deformation of an intergranular glassy phase.