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Ultrasonic Measurement Of Silicon-Growth InterfacePosition of interface between silicon melt and growing ribbon of silicon measured with aid of reflected ultrasound, according to proposal. Reflections reveal characteristics of ribbon and melt. Ultrasound pulses travel through rods to silicon ribbon growing by dendritic-web process. Rods return reflections of pulses to sonic transducers. Isolate transducers thermally, but not acoustically, from hot silicon melt.
Document ID
19880000354
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Heyser, Richard C.
(Caltech)
Date Acquired
August 13, 2013
Publication Date
June 1, 1988
Publication Information
Publication: NASA Tech Briefs
Volume: 12
Issue: 6
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-17076
Accession Number
88B10354
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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