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Automatic Replenishment Of Dopant In Silicon GrowthDopant incorporated feed pellets to maintain required concentration. Technique of continuous replenishment of dopant in silicon melt helps ensure correct resistivity in solid silicon grown from melt. Technique used in dendritic-web growth process in which ribbon of silicon continously pulled from molten material. Providing uniform doping and resistivity in ribbon technique enables production of high-quality silicon ribbon at high yields for use in semiconductor devices.
Document ID
19880000380
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kochka, E. L.
(Westinghouse Electric Corp.)
Date Acquired
August 13, 2013
Publication Date
July 1, 1988
Publication Information
Publication: NASA Tech Briefs
Volume: 12
Issue: 7
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-17138
Accession Number
88B10380
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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