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Empirical Modeling Of Single-Event UpsetExperimental study presents examples of empirical modeling of single-event upset in negatively-doped-source/drain metal-oxide-semiconductor static random-access memory cells. Data supports adoption of simplified worst-case model in which cross sectionof SEU by ion above threshold energy equals area of memory cell.
Document ID
19880000563
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A. (Caltech)
Smith, Lawrence S. (Caltech)
Soli, George A. (Caltech)
Thieberger, Peter (Brookhaven National Laboratory)
Smith, Stephen L. (Intel Corp.)
Atwood, Gregory E. (Intel Corp.)
Date Acquired
August 13, 2013
Publication Date
December 1, 1988
Publication Information
Publication: NASA Tech Briefs
Volume: 12
Issue: 11
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-16920
Accession Number
88B10563
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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