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Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGeAnnealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.
Document ID
19880000806
Document Type
Thesis/Dissertation
Authors
Draper, Susan L.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
October 1, 1987
Subject Category
Nonmetallic Materials
Report/Patent Number
NAS 1.15:100164
E-3729
NASA-TM-100164
Funding Number(s)
PROJECT: RTOP 506-41-31
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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