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Growth and characterization of molecular beam epitaxial GaAs layers on porous siliconGaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.
Document ID
19880023203
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lin, T. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Liu, J. K. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Sadwick, L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wang, K. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kao, Y. C. (California, University Los Angeles, United States)
Date Acquired
August 13, 2013
Publication Date
September 14, 1987
Publication Information
Publication: Applied Physics Letters
Volume: 51
ISSN: 0003-6951
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other