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Vacancy formation energies in II-VI semiconductorsCation and anion vacancy formation energies are calculated for HgTe, ZnTe, CdTe, and their dilute alloys. Harrison's tight-bonding theory is extended to a cluster embedded in an extended crystal. Only neutral vacancies have been considered, and two final states for the removed atom have been addressed: a free atom in vacuum and an atom on an ideal (111) surface.
Document ID
19880025677
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Berding, M. A.
(SRI International Corp. Menlo Park, CA, United States)
Sher, A.
(SRI International Menlo Park, CA, United States)
Chen, A.-B.
(Auburn University AL, United States)
Date Acquired
August 13, 2013
Publication Date
October 1, 1987
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 5
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
88A12904
Funding Number(s)
CONTRACT_GRANT: N00014-85-K-0448
CONTRACT_GRANT: NAS1-12232
CONTRACT_GRANT: F49620-85-K-0023
Distribution Limits
Public
Copyright
Other

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