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Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperaturesChanges in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.
Document ID
19880027646
Document Type
Reprint (Version printed in journal)
Authors
Kang, C. H. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Kondo, K. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C. (MIT Cambridge, MA, United States)
Date Acquired
August 13, 2013
Publication Date
May 1, 1987
Publication Information
Publication: Electrochemical Society, Journal
Volume: 134
ISSN: 0013-4651
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NAS8-36604
Distribution Limits
Public
Copyright
Other