NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Behavior of ion-implanted junction diodes in 3C SiCp-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kohm. The current-voltage characteristics were measured between room temperature and 270 C. The extracted ideality factors increase with temperature.
Document ID
19880028196
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.339291
Authors
Avila, R. E. (Case Western Reserve Univ. Cleveland, OH, United States)
Kopanski, J. J. (Case Western Reserve Univ. Cleveland, OH, United States)
Fung, C. D. (Case Western Reserve University Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
October 15, 1987
Publication Information
Publication: Journal of Applied Physics
Volume: 62
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Accession Number
88A15423
Funding Number(s)
CONTRACT_GRANT: NAG3-389
CONTRACT_GRANT: NAG3-490
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available