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Properties of silicon-germanium thermoelectric alloys with additivesThe paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.
Document ID
19880029382
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mclane, George
(U.S. Army, Electronics Technology and Devices Laboratory, Fort Monmouth NJ, United States)
Raag, Valvo
(Army Lab. Command Fort Monmouth, NJ, United States)
Danielson, Lee
(Thermo Electron Corp. Waltham, MA, United States)
Wood, Charles
(Army Lab. Command Fort Monmouth, NJ, United States)
Vandersande, Jan
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1986
Subject Category
Solid-State Physics
Meeting Information
Meeting: International Power Sources Symposium
Location: Cherry Hill, NJ
Country: United States
Start Date: June 9, 1986
End Date: June 12, 1986
Accession Number
88A16609
Distribution Limits
Public
Copyright
Other

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