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Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurementsAn improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.
Document ID
19880031351
Document Type
Reprint (Version printed in journal)
Authors
Jung, Tae-Won (Florida Univ. Gainesville, FL, United States)
Lindholm, Fredrik A. (Florida Univ. Gainesville, FL, United States)
Neugroschel, Arnost (Florida, University Gainesville, United States)
Date Acquired
August 13, 2013
Publication Date
October 1, 1987
Publication Information
Publication: Solar Cells
Volume: 22
ISSN: 0379-6787
Subject Category
ENERGY PRODUCTION AND CONVERSION
Distribution Limits
Public
Copyright
Other