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Free surfaces and multilayer interfaces in the GaAs/AlAs systemSemiempirical potential energy functions have been utilized for a variety of calculations in the Ga-Al-As system. Surface energies have been calculated for several orientations of GaAs. Ledge energies for the GaAs (0 0 -1) (As-terminated) surface show long-range interaction effects with the ledge energy increasing with spacing. GaAs (001)/AlAs (001) superlattices have been simulated for a range of interlayer spacings with the excess interfacial energy per interlayer increasing from 5 erg/sq cm at an interlayer spacing of 1 molecular layer (5.8 A) to 50 erg/sq cm at an interlayer spacing of 18 molecular layers (103.8 A).
Document ID
19880031500
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Choi, D. K.
(Stanford Univ. CA, United States)
Takai, T.
(Stanford Univ. CA, United States)
Erkoc, S.
(Stanford Univ. CA, United States)
Halicioglu, T.
(Stanford Univ. CA, United States)
Tiller, W. A.
(Stanford University CA, United States)
Date Acquired
August 13, 2013
Publication Date
November 1, 1987
Publication Information
Publication: Journal of Crystal Growth
Volume: 85
Issue: 1-2
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
88A18727
Funding Number(s)
CONTRACT_GRANT: NCC2-297
CONTRACT_GRANT: MDA903-85-K-0100
Distribution Limits
Public
Copyright
Other

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