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All NbN tunnel junction fabricationThe development of SIS tunnel junctions based on NbN for mixer applications in the submillimeter range is reported. The unique technological challenges inherent in the development of all refractory-compound superconductor-based tunnel junctions are highlighted. Current deposition and fabrication techniques are discussed, and the current status of all-NbN tunnel junctions is reported.
Document ID
19880032430
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1007/BF01011075
Authors
Leduc, H. G. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Khanna, S. K. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Stern, J. A. (California Institute of Technology Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
October 1, 1987
Publication Information
Publication: International Journal of Infrared and Millimeter Waves
Volume: 8
ISSN: 0195-9271
Subject Category
Electronics And Electrical Engineering
Accession Number
88A19657
Distribution Limits
Public
Copyright
Other

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