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Direct control and characterization of a Schottky barrier by scanning tunneling microscopyScanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.
Document ID
19880037792
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Bell, L. D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kaiser, W. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hecht, M. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
January 25, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 52
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
88A25019
Distribution Limits
Public
Copyright
Other

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