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Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsThe decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric-pressure flow system with the use of D2 to label the reaction products which are analyzed in a time-of-flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas-phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid-base adduct that forms and subsequently eliminates CH4.
Document ID
19880039338
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Larsen, C. A.
(Utah Univ. Salt Lake City, UT, United States)
Buchan, N. I.
(Utah Univ. Salt Lake City, UT, United States)
Stringfellow, G. B.
(Utah, University Salt Lake City, United States)
Date Acquired
August 13, 2013
Publication Date
February 8, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 52
ISSN: 0003-6951
Subject Category
Inorganic And Physical Chemistry
Accession Number
88A26565
Funding Number(s)
CONTRACT_GRANT: AF-AFOSR-87-0233
CONTRACT_GRANT: NAG1-608
Distribution Limits
Public
Copyright
Other

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