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Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substratesSamples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
Document ID
19880039714
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Radhakrishnan, G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Mccullough, O.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cser, J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, J.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
February 29, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 52
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
88A26941
Distribution Limits
Public
Copyright
Other

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