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Modeling of mechanical properties of II-VI materialsThis paper reviews some new developments in the theory of alloy correlations, order-disorder transitions, and solidus phase-transition curves. It is argued that semiconductor alloys are never truly random, and the various phenomena that drive deviations from random arrangements are introduced. Likely consequences of correlations on the ability to fine-tune the lattice match of epitaxial layers to substrates, on vacancy formation, on diffusion, and on vapor-phase crystal growth are discussed. Examples are chosen for the alloys Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Cd(1-y)Zn(y)Te, and CdSe(1-y)Te(y).
Document ID
19880040876
Document Type
Reprint (Version printed in journal)
Authors
Sher, A. (SRI International Corp. Menlo Park, CA, United States)
Berding, M. A. (SRI International Corp. Menlo Park, CA, United States)
Van Schilfgaarde, M. (SRI International Menlo Park, CA, United States)
Chen, A.-B. (SRI International Corp. Menlo Park, CA, United States)
Patrick, R. (Auburn University AL, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Publication Information
Publication: Journal of Crystal Growth
Volume: 86
Issue: 1-4
ISSN: 0022-0248
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NAS1-18232
CONTRACT_GRANT: N00014-85-K-0448
CONTRACT_GRANT: F49620-85-C-0023
Distribution Limits
Public
Copyright
Other