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Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAsThe effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.
Document ID
19880040892
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Benz, R. G., II
(Georgia Inst. of Tech. Atlanta, GA, United States)
Huang, P. C.
(Georgia Inst. of Tech. Atlanta, GA, United States)
Stock, S. R.
(Georgia Inst. of Tech. Atlanta, GA, United States)
Summers, C. J.
(Georgia Institute of Technology Atlanta, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Publication Information
Publication: Journal of Crystal Growth
Volume: 86
Issue: 1-4
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
88A28119
Funding Number(s)
CONTRACT_GRANT: NAG1-586
Distribution Limits
Public
Copyright
Other

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