NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Microscopy of epitaxially grown beta-SiC on 001-plane siliconVarious defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.
Document ID
19880043796
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Pirouz, P. (Case Western Reserve Univ. Cleveland, OH, United States)
Chorey, C. M. (Case Western Reserve Univ. Cleveland, OH, United States)
Cheng, T. T. (Case Western Reserve University Cleveland, OH, United States)
Powell, J. A. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Nonmetallic Materials
Meeting Information
Meeting: Microscopy of semiconducting materials 1987
Location: Oxford
Start Date: April 6, 1987
Accession Number
88A31023
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.

Related Records

There are no records associated with this record.
No Preview Available