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Excimer laser annealing: A gold process for CZ silicon junction formationA cold process using an excimer laser for junction formation in silicon has been evaluated as a way to avoid problems associated with thermal diffusion. Conventional thermal diffusion can cause bulk precipitation of SiOx and SiC or fail to completely activate the dopant, leaving a degenerate layer at the surface. Experiments were conducted to determine the feasibility of fabricating high quality p-n junctions using a pulsed excimer laser for junction formation at remelt temperature with ion-implanted surfaces. Solar-cell efficiency exceeding 16 percent was obtained using Czochralski single-crystal silicon without benefit of back surface field or surface passivation. Characterization shows that the formation of uniform, shallow junctions (approximately 0.25 micron) by excimer laser scanning preserves the minority carrier lifetime that leads to high current collection. However, the process is sensitive to initial surface conditions and handling parameters that drive the cost up.
Document ID
Document Type
Conference Paper
Wong, David C.
(ARCO Solar, Inc. Chatsworth, CA, United States)
Bottenberg, William R.
(ARCO Solar, Inc. Chatsworth, CA, United States)
Byron, Stanley
(Spectra Technology, Inc. Bellevue, WA, United States)
Alexander, Paul
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Electronics And Electrical Engineering
Meeting Information
IEEE Photovoltaic Specialists Conference(New Orleans, LA)
Accession Number
Funding Number(s)
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