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Resistivity and thickness effects in dendritic web silicon solar cellsThe decrease of minority carrier lifetime as resistivity decreases in dendritic-web silicon solar cells is addressed. This variation is shown to be consistent with the presence of defect levels in the bandgap which arise from extended defects in the web material. The extended defects are oxide precipitates (SiOx) and the dislocation cores they decorate. Sensitivity to this background distribution of defect levels increases with doping because the Fermi level moves closer to the majority carrier band edge. For high-resistivity dendritic-web silicon, which has a low concentration of these extended defects, cell efficiencies as high as 16.6 percent (4 sq cm, 40 ohm-cm boron-doped base, AM1.5 global, 100 mW/sq cm, 25 C JPL LAPSS1 measurement) and a corresponding electron lifetime of 38 microsec have been obtained. Thickness effects occur in bifacial cell designs and in designs which use light trapping. In some cases, the dislocation/precipitate defect can be passivated through the full thickness of web cells by hydrogen ion implantation.
Document ID
19880047088
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Meier, D. L.
(Westinghouse Electric Corp. Pittsburgh, PA, United States)
Hwang, J. M.
(Westinghouse Electric Corp. Pittsburgh, PA, United States)
Greggi, J.
(Westinghouse Electric Corp. Pittsburgh, PA, United States)
Campbell, R. B.
(Westinghouse Electric Corp. Pittsburgh, PA, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: IEEE Photovoltaic Specialists Conference
Location: New Orleans, LA
Country: United States
Start Date: May 4, 1987
End Date: May 8, 1987
Accession Number
88A34315
Funding Number(s)
CONTRACT_GRANT: JPL-956786
Distribution Limits
Public
Copyright
Other

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