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Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cellsTwo lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.
Document ID
19880047113
Document Type
Conference Paper
Authors
Stupica, John (Cleveland State Univ. OH, United States)
Goradia, Chandra (Cleveland State University OH, United States)
Swartz, Clifford K. (Cleveland State Univ. OH, United States)
Weinberg, Irving (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Meeting Information
IEEE Photovoltaic Specialists Conference(New Orleans, LA)
Distribution Limits
Public
Copyright
Other