Effects of radiation damage on the silicon latticeSilicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.
Document ID
19880047114
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Dumas, Katherine A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lowry, Lynn (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Russo, O. Louis (New Jersey Institute of Technology Newark, United States)