Effect of front and rear incident proton irradiation on silicon solar cells

Four solar cell types of current manufacture were irradiated through the front and rear surfaces with protons in the energy range between 1 and 10 MeV. The solar cell parameters varied for this study were cell thickness and back surface field (BSF) vs. no BSF. Some cells were irradiated at normal incidence and an equal number were irradiated with simulated isotropic fluences. The solar cell electrical characteristics were measured under simulated AM0 illumination after each fluence. Using the normal incidence data, proton damage coefficients were computed for all four types of cells for both normal and omnidirectional radiation fields. These were found to compare well with the omnidirectional damage coefficients derived directly from the rear-incidence radiation data. Similarly, the rear-incidence omnidirectional radiation data were used to compute appropriate damage coefficients. A method for calculating the effect of a spectrum of energies is derived from these calculations. It is suitable for calculating the degradation of cells in space when they have minimal rear-surface shielding.