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Studies of molecular-beam epitaxy growth of GaAs on porous Si substratesGaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.
Document ID
19880048634
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Mii, Y. J.
(California Univ. Los Angeles, CA, United States)
Kao, Y. C.
(California Univ. Los Angeles, CA, United States)
Wu, B. J.
(California Univ. Los Angeles, CA, United States)
Wang, K. L.
(California, University Los Angeles, United States)
Lin, T. L.
(California Univ. Los Angeles, CA, United States)
Liu, J. K.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
April 1, 1988
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 6
ISSN: 0734-211X
Subject Category
Solid-State Physics
Accession Number
88A35861
Funding Number(s)
CONTRACT_GRANT: NSF DMR-84-2119
Distribution Limits
Public
Copyright
Other

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