Amorphous silicon deposition diagnostics using coherent anti-Stokes Raman spectroscopyThis paper reports on an in situ silicon deposition process diagnostics, using CARS performed at state-of-the-art a-Si:H film deposition conditions in a reactor designed for a-Si:H solar cell fabrication. The diagnostics procedure measures the silane depletion in an RF plasma as a function of the silane flow rate (where the relationship is linear between 50-percent depletion, at a flow rate of 5.6 sccm, and about 8-percent depletion, at 80 sccm) and the RF power (where the silane depletion is linearly dependent on the RF power in the region of 4 to 12 W). The linear RF power dependence of the silane depletion is considered to be consistent with the mechanism of silane decomposition primarily by electron impact dissociations, while the flow rate dependence is interpreted in terms of the residence time of the SiH4 molecules in the glow discharge region, where an increase of the residence time at a low flow rate results in a high depletion ratio.
Document ID
19880053566
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Shing, Y. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Perry, J. W. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Coulter, D. R. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Radhakrishnan, G. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)