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Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGeSilicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.
Document ID
19880053569
Document Type
Conference Proceedings
Authors
Vandersande, Jan W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wood, Charles
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Draper, Susan
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1987
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Other
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