Binary synaptic connections based on memory switching in a-Si:H for artificial neural networksA scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.
Document ID
19880053571
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Thakoor, A. P. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lamb, J. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Moopenn, A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Khanna, S. K. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)