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Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substratesEpitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.
Document ID
19880054704
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Nouhi, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Radhakrishnan, G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Koliwad, K.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
June 13, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 52
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
88A41931
Distribution Limits
Public
Copyright
Other

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