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Characterization of direct readout Si:Sb and Si:Ga infrared detector arrays for space-based astronomyPreliminary test results from the evaluation of Si:Sb and Si:Ga 58 x 62-element infrared detector arrays are presented. These devices are being characterized under background conditions and readout rates representative of operation in orbiting, crogenically-cooled infrared observatories. The arrays are hybridized to silicon direct-readout multiplexers which allow random-access and nondestructive readout. Array performance optimization is being conducted with a flexible microcomputer-based drive and readoaut electronics system. Preliminary Si:Sb measurements indicate a sense node capacitance of 0.06 pF, peak (28-micron) responsivity above 3 A/W at 2V bias, read noise of 130 rms e(-), dark current approximately 10 e(-)/s, and a well capacity greater than 10 to the 5th e(-). The limited test data available on the performance of the Si:Ga array are also discussed.
Document ID
19880055310
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mckelvey, Mark E.
(NASA Ames Research Center Moffett Field, CA, United States)
Mccreight, Craig R.
(NASA Ames Research Center Moffett Field, CA, United States)
Goebel, John H.
(NASA Ames Research Center Moffett Field, CA, United States)
Moss, Nicolas N.
(NASA Ames Research Center Moffett Field, CA, United States)
Savage, Maureen L.
(Sterling Software, Inc. Palo Alto, CA, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Subject Category
Spacecraft Instrumentation
Accession Number
88A42537
Distribution Limits
Public
Copyright
Other

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