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Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfacesScanning tunneling microscopy (STM) methods are used to characterize hydrogen-terminated Si surfaces prepared by a novel method. The surface preparation method is used to expose the Si-SiO2 interface. STM images directly reveal the topographic structure of the Si-SiO2 interface. The dependence of interface topography on oxide preparation conditions observed by STM is compared to the results of conventional surface characterization methods. Also, the electronic structure of the hydrogen-terminated surface is studied by STM spectroscopy. The near-ideal electronic structure of this surface enables direct tunnel spectroscopy measurements of Schottky barrier phenomena. In addition, this method enables probing of semiconductor subsurface properties by STM.
Document ID
19880061217
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kaiser, W. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bell, L. D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hecht, M. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
April 1, 1988
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 6
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
88A48444
Distribution Limits
Public
Copyright
Other

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