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Barrier height enhancement of InP-based n-Ga(0.47)In(0.53)As Schottky-barrier diodes grown by molecular beam epitaxyBarrier height enhancement of an InP-based p(+)n-Ga(0.47)In(0.53)As Schottky diode grown by MBE has been demonstrated for infra-red photodetector applications. A barrier height of 0.35 eV for n-Ga(0.47)In(0.53)As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p(+)-Ga(0.47)In(0.53)As surface layer of 30 nm thick. The results show a reverse leakage current density of 0.0015 A/sq cm and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga(0.47)In(0.53)As Schottky-barrier diodes at a reverse bias voltage of 5 V.
Document ID
19880061436
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kim, J. H.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Li, S. S.
(Florida, University Gainesville, United States)
Figueroa, L.
(Boeing High Technology Center Seattle, WA, United States)
Date Acquired
August 13, 2013
Publication Date
May 26, 1988
Publication Information
Publication: Electronics Letters
Volume: 24
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
88A48663
Distribution Limits
Public
Copyright
Other

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