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Microwave and millimeter-wave resonant-tunneling devicesResonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.
Document ID
19880061812
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Sollner, T. C. L. Gerhard
(Massachusetts Inst. of Tech. Lexington, MA, United States)
Le, Han Quang
(MIT Lexington, MA, United States)
Brown, E. L.
(Massachusetts Inst. of Tech. Lexington, MA, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Publication Information
Publication: The Lincoln Laboratory Journal
Volume: 1
ISSN: 0896-4130
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
AD-A203504
Accession Number
88A49039
Distribution Limits
Public
Copyright
Other

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