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A molecular shift register based on electron transferAn electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.
Document ID
19880062578
Document Type
Reprint (Version printed in journal)
Authors
Hopfield, J. J. (California Institute of Technology, Pasadena; AT&T Bell Laboratories, Murray Hill NJ, United States)
Onuchic, Josenelson (Sao Paulo, Universidade Sao Carlos, Brazil)
Beratan, David N. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 13, 2013
Publication Date
August 12, 1988
Publication Information
Publication: Science
Volume: 241
ISSN: 0036-8075
Subject Category
ATOMIC AND MOLECULAR PHYSICS
Distribution Limits
Public
Copyright
Other