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Deposition of vanadium oxide films by direct-current magnetron reactive sputteringIt is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Kusano, E.
(Illinois Univ. Urbana, IL, United States)
Theil, J. A.
(Illinois Univ. Urbana, IL, United States)
Thornton, John A.
(Illinois, University Urbana, United States)
Date Acquired
August 13, 2013
Publication Date
June 1, 1988
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 6
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
Funding Number(s)
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