Gas-Jet Cooling Would Improve Czochralski Process

Controlled cooling by jets of gas improves growth of single crystals of silocon by Czochralski process, according to study. Rate of cooling by jets joins temperature of crucible and pulling rate as input variable of process adjusted to achieve required diameter of crystal and shape of crystal/melt interface. Critical parameters of growing crystal, output variables of Czochralski process controlled via two or all three of input variables. One input variable, usually speed, held constant while other two adjusted to achieve required diameter and interface.