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High-Performance Power-Semiconductor PackagesA 600-V, 50-A transistor and 1,200-V, 50-A diode in rugged, compact, lightweight packages intended for use in inverter-type power supplies having switching frequencies up to 20 kHz. Packages provide low-inductance connections, low loss, electrical isolation, and long-life hermetic seal. Low inductance achieved by making all electrical connections to each package on same plane. Also reduces high-frequency losses by reducing coupling into inherent shorted turns in packaging material around conductor axes. Stranded internal power conductors aid conduction at high frequencies, where skin effect predominates. Design of packages solves historical problem of separation of electrical interface from thermal interface of high-power semiconductor device.
Document ID
19890000271
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Renz, David
(NASA Lewis Research Center, Cleveland, OH.)
Hansen, Irving
(NASA Lewis Research Center, Cleveland, OH.)
Berman, Albert
(Microsemi Corp.)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 6
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-14818
Accession Number
89B10271
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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