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Stabilizing Semiconductor Devices With HydrogenDamage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.
Document ID
19890000275
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Overhauser, Albert W.
(Caltech)
Maserjian, Joseph
(Caltech)
Date Acquired
August 14, 2013
Publication Date
June 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 6
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17187
Accession Number
89B10275
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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