NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Internal Correction Of Errors In A DRAMError-correcting Hamming code built into circuit. A 256 K dynamic random-access memory (DRAM) circuit incorporates Hamming error-correcting code in its layout. Feature provides faster detection and correction of errors at less cost in amount of equipment, operating time, and software. On-chip error-correcting feature also makes new DRAM less susceptible to single-event upsets.
Document ID
19890000593
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Zoutendyk, John A.
(Caltech)
Watson, R. Kevin
(Caltech)
Schwartz, Harvey R.
(Caltech)
Nevill, Leland R.
(Micron Technology, Inc.)
Hasnain, Zille
(Micron Technology, Inc.)
Date Acquired
August 14, 2013
Publication Date
December 1, 1989
Publication Information
Publication: NASA Tech Briefs
Volume: 13
Issue: 12
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-17406
Accession Number
89B10593
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available