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A V-grooved GaAs solar cellV-grooved GaAs solar cells promise the benefits of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation compared to planar cells. A GaAs homojunction cell was fabricated by etching a V-groove pattern into an n epilayer (2.1 x 10 to the 17th power per cu cm) grown by metalorganic chemical vapor deposition (MOCVD) on an n+ substrate (2.8 x 10 to the 18th power per cu cm) and then depositing and MOCVD p epilayer (4.2 x 10 to the 18th power per cu cm). Reflectivity measurements on cells with and without an antireflective coating confirm the expected decrease in reluctance of the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell was 13 percent higher than that of the planar control.
Document ID
19890012806
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bailey, S. G.
(Direct Business Satellite Systems Ltd. London (England)., United States)
Fatemi, N. S.
(Sverdrup Technology, Inc., Cleveland OH., United States)
Landis, G. A.
(National Academy of Sciences - National Research Council Washington, DC., United States)
Wilt, D. M.
(NASA Lewis Research Center Cleveland, OH, United States)
Thomas, R. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Arrison, A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1988
Subject Category
Energy Production And Conversion
Report/Patent Number
NAS 1.15:101970
E-4668
NASA-TM-101970
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Las Vegas, NV
Country: United States
Start Date: September 26, 1988
End Date: September 30, 1988
Sponsors: IEEE
Accession Number
89N22177
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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