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Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAsResults of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.
Document ID
19890015357
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bailey, Sheila G.
(NASA Lewis Research Center Cleveland, OH, United States)
Landis, Geoffrey A.
(NASA Lewis Research Center Cleveland, OH, United States)
Wilt, David M.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
April 1, 1989
Publication Information
Publication: Space Photovoltaic Research and Technology, 1988. High Efficiency, Space Environment, and Array Technology
Subject Category
Energy Production And Conversion
Accession Number
89N24728
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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