Properties of multiple quantum wells and their use in high-speed detectors and modulatorsQuantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.
Document ID
19890022969
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bhattacharya, Pallab (Michigan, University Ann Arbor, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Optoelectronic Materials, Devices, Packaging, and Interconnects