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Properties of multiple quantum wells and their use in high-speed detectors and modulatorsQuantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.
Document ID
19890022969
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Bhattacharya, Pallab
(Michigan, University Ann Arbor, United States)
Date Acquired
August 13, 2013
Publication Date
January 1, 1988
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Optoelectronic Materials, Devices, Packaging, and Interconnects
Location: San Diego, CA
Country: United States
Start Date: August 19, 1987
End Date: August 21, 1987
Sponsors: SPIE
Accession Number
89A10340
Funding Number(s)
CONTRACT_GRANT: DAAL03-87-K-0007
CONTRACT_GRANT: DAAL03-86-K-0105
CONTRACT_GRANT: NAG1-555
Distribution Limits
Public
Copyright
Other

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