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The effect of phosphorus and sulfur treatment on the surface properties of InPExperimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.
Document ID
19890023456
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Iyer, R. (Colorado State Univ. Fort Collins, CO, United States)
Chang, R. R. (Colorado State Univ. Fort Collins, CO, United States)
Dubey, A. (Colorado State Univ. Fort Collins, CO, United States)
Lile, D. L. (Colorado State University Fort Collins, United States)
Date Acquired
August 13, 2013
Publication Date
August 1, 1988
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 6
ISSN: 0734-211X
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NSF CDR-86-22236
Distribution Limits
Public
Copyright
Other