Photorefractive gain in GaAs under a dc electric field

This paper reports on the first observation of a photorefractive gain coefficient as high as 2.6/cm in the undoped liquid-encapsulated Czochralski-grown GaAs crystals at 1.06 microns under a dc electric field of 13 kV/cm without using the moving grating technique.The absorption coefficient of the crystals used is 1.3/cm, showing that a net gain has been achieved. This measured gain coefficient is close to the predicted theoretical value.