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Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistorA novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts is reported. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In(0.53)Ga(0.47)As layer, an InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8 x 10 to the -7th ohm sq cm to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
Document ID
19890029010
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Peng, C. K.
(Illinois Univ. Urbana, IL, United States)
Chen, J.
(Illinois Univ. Urbana, IL, United States)
Morkoc, H.
(Illinois, University Urbana, United States)
Date Acquired
August 14, 2013
Publication Date
October 31, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 53
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
89A16381
Distribution Limits
Public
Copyright
Other

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